Mini/Micro LED
Disruptive GaN on Silicon Technology Micro LED Chip
Product Description
Micro LED new display technology has broad development prospects and can be applied to AR glasses, HUD, ADB car lights, transparent displays and other broad fields. The Micro LED technology above 8-inch silicon substrate GaN with silicon CMOS driver wafer can rely on mature integrated circuit equipment and processes, which is the inevitable industrialization route for manufacturing low-cost, high-yield Micro-LED.
Relying on nearly 20 years of industrialization accumulation in the entire silicon substrate LED chain, We have developed 4-inch to 12-inch silicon substrate InGaN-based near-ultraviolet, blue, green, and red epitaxial wafers for Micro LED applications, ranging from 365nm to 650nm. All-round optimization has been carried out on key industrialization indicators such as light efficiency, consistency, and reliability, and on this basis, red, green, and blue Micro-LED microdisplay arrays have been successfully developed.
The company is committed to providing high-quality silicon substrate Micro LED epitaxial chips and device modules to customers around the world to facilitate the infinite possible applications of Metaverse.
Featuresa and Advantages
From the perspective of industrialization, Using large-size silicon substrate GaN technology to prepare Micro LED:
1. it has many advantages such as large size, low cost, lossless substrate removal, and IC process compatibility;
2. Compared with the 4-inch substrate, the Micro LED chip output per unit substrate area increases by 25% with an 8-inch substrate;
3. Using an 8-inch silicon substrate to prepare Micro LED, the BOM cost of each display module is only 30% of that of a 4-inch sapphire solution (including epitaxy, chips and CMOS).
