Mini/Micro LED
Disruptive GaN on Silicon Technology Mini LED Chip
Specification
Product Type |
Size (mil) |
Voltage (V) |
Current（mA） |
Main Wavelength (nm) |
Light Intensity（mcd） |
LPIBG04A |
4x4 |
2.7~3.3 |
IF=3 |
460~474 |
20~87 |
LPIGG04A |
4x4 |
2.4~3.0 |
IF=3 |
520~538 |
35~105 |
LPIBG05A |
5x5 |
2.7~3.3 |
IF=3 |
460~474 |
25~87 |
LPIGG05A |
5x5 |
2.4~3.0 |
IF=3 |
520~534 |
42~105 |
Product Description
Our Mini LED chip is manufactured based on the silicon substrate GaN based LED technology that won the first prize of the the State Technological Innovation Award in 2015. It has uniform and fast current distribution, single side light output, good directivity, and good light quality, and is suitable for high-definition displays and high-end lighting fields with high light quality requirements.
Features and Advantages
1. The chip has good consistency, stability and reliability;
2. The vertically structured blue, green chip has similar characteristics to the red chip, which can greatly reduce the caterpillar abnormalities that are prone to occur in most current screens;
3. Most of the existing equipment in the packaging factory can be seamlessly connected, which greatly reduces the investment in fixed assets of the packaging factory;
4. The vertical chip has a square design and a larger die-bonding window;
5. It is suitable for various packaging forms: IMD, 1010 and COB, etc.
